MOCVD equipment manufacturer Veeco wins TSRI order to accelerate the application of third-generation semiconductor technology

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　　On June 8, US MOCVD equipment manufacturer Veeco announced that Taiwan Semiconductor Research Institute (TSRI, Narlabs) has selected Veeco's Propel® R&D Metal Organic Chemical Vapor Deposition (MOCVD) equipment for gallium nitride (GaN)-based Leading-edge development and collaboration related to power and RF devices.

　　According to the official introduction, Veeco's Propel® GaN MOCVD system is designed for power semiconductor and RF applications, and is configured with a single-wafer reactor platform capable of depositing high-quality GaN films for the production of high-efficiency power and RF devices.

　　The single-wafer reactor is based on Veeco's Turbo Disc® technology, including Iso Flange™ and Symm Heat™ breakthrough technologies, which help achieve homogeneous laminar flow and consistent temperature profiles across the wafer, it is high-volume production and 300mm functionality as well as ideal for R&D applications.

　　Veeco said that the Propel® R&D MOCVD equipment has been installed in the TSRI Hsinchu laboratory, enabling joint collaboration to drive technological innovation, as well as the ability to develop and demonstrate the technology in emerging GaN markets. The two parties will work together and collaborate to accelerate the high-volume, low-cost application of third-generation semiconductor technology on 200 and 300mm substrates.

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