- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Vf - Forward Voltage | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | If - Forward Current | Configuration | Ir - Reverse Current | Vrrm - Repetitive Reverse Voltage | Ifsm - Forward Surge Current | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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1,402
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Infineon Technologies | MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 9.7 mOhms | 161 nC | Enhancement | ||||||||||
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GET PRICE |
1,262
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | Enhancement | |||||||||
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1,845
In-stock
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Infineon Technologies | Schottky Diodes & Rectifiers SIC CHIP/DISCRETE | Schottky Silicon Carbide Diodes | 1.5 V | SMD/SMT | TO-252-2 | - 55 C | + 175 C | Reel | 10 A | Single | 4 uA | 1.2 kV | 99 A | SiC |