- Vf - Forward Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Vf - Forward Voltage | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Number of Channels | If - Forward Current | Configuration | Ir - Reverse Current | Vrrm - Repetitive Reverse Voltage | Ifsm - Forward Surge Current | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,402
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 9.7 mOhms | 161 nC | Enhancement | |||||||||||
|
|
GET PRICE |
1,262
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | Enhancement | ||||||||||
|
|
1,845
In-stock
|
Infineon Technologies | Schottky Diodes & Rectifiers SIC CHIP/DISCRETE | Schottky Silicon Carbide Diodes | 1.5 V | SMD/SMT | TO-252-2 | - 55 C | + 175 C | Reel | 10 A | Single | 4 uA | 1.2 kV | 99 A | SiC | ||||||||||||
|
|
GET PRICE |
14,417
In-stock
|
Infineon Technologies | Schottky Diodes & Rectifiers 10 V 3000 mA | Schottky Diodes | 0.3 V at 1 A | SMD/SMT | SOD-323-2 | - 55 C | + 85 C | BAT60 | Reel | 3 A | Single | 18 mA | 5 A | Si |
