- Manufacture :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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17,914
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1 A | 190 mOhms | 2.8 V | 2 nC | Enhancement | |||
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7,172
In-stock
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ON Semiconductor | MOSFET 20V 540mA/-430mA Complementary w/ESD | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 540 mA | 550 mOhms, 900 mOhms | Enhancement | |||||
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6,698
In-stock
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ON Semiconductor | MOSFET -20V -430mA Dual P-Channel | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 430 mA | 1 Ohms | Enhancement | |||||
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2,124
In-stock
|
Diodes Incorporated | MOSFET 31V to 100V Comp Pair Enh FET 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 5.1 A, - 3.1 A | 55 mOhms, 130 mOhms | 3 V, - 3 V | 20.8 nC, 9.5 nC | Enhancement |