- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Vf - Forward Voltage | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Number of Channels | If - Forward Current | Peak Reverse Voltage | Max Surge Current | Configuration | Ir - Reverse Current | Recovery Time | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
849
In-stock
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STMicroelectronics | MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 3.7 Ohms | 42 nC | Enhancement | ||||||||||||
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580
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 2.3 Ohms | Enhancement | QFET | |||||||||||||
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GET PRICE |
479
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 1.55 Ohms | Enhancement | QFET | ||||||||||||
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GET PRICE |
868
In-stock
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ROHM Semiconductor | Diodes - General Purpose, Power, Switching DIODE SWITCH 600V 20... | General Purpose Diodes | 2.3 V | Through Hole | - 55 C | + 150 C | RFUS20TM6S | Tube | 20 A | 600 V | 100 A | Single | 10 uA | 23 ns |
