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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Vf - Forward Voltage | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Number of Channels | If - Forward Current | Configuration | Ir - Reverse Current | Vrrm - Repetitive Reverse Voltage | Ifsm - Forward Surge Current | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,402
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Infineon Technologies | MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 9.7 mOhms | 161 nC | Enhancement | |||||||||||||
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807
In-stock
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Infineon / IR | MOSFET MOSFT 150V 104A 11mOhm 77nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 104 A | 9.3 mOhms | 5 V | 77 nC | |||||||||||||
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5,171
In-stock
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STMicroelectronics | Schottky Diodes & Rectifiers 650V Power Schottky 6A 10nC 175c | Schottky Silicon Carbide Diodes | 1.75 V | Through Hole | TO-220-2 | - 40 C | + 175 C | STPSC6H065 | Tube | 6 A | Single | 0.06 mA | 650 V | 60 A | SiC |