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Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Technology :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Product Vf - Forward Voltage Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Series Packaging Number of Channels If - Forward Current Configuration Ir - Reverse Current Vrrm - Repetitive Reverse Voltage Ifsm - Forward Surge Current Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
IRFP4668PBF
1+
$6.0000
10+
$6.0000
25+
$5.0000
100+
$5.0000
RFQ
1,402
In-stock
Infineon Technologies MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg     30 V Through Hole TO-247-3 - 55 C + 175 C   Tube 1 Channel           Si N-Channel 200 V 130 A 9.7 mOhms   161 nC Enhancement
IRFB4115PBF
1+
$3.0000
10+
$2.0000
100+
$2.0000
250+
$2.0000
RFQ
807
In-stock
Infineon / IR MOSFET MOSFT 150V 104A 11mOhm 77nC Qg     20 V Through Hole TO-220-3 - 55 C + 175 C   Tube 1 Channel           Si N-Channel 150 V 104 A 9.3 mOhms 5 V 77 nC  
STPSC6H065D
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RFQ
5,171
In-stock
STMicroelectronics Schottky Diodes & Rectifiers 650V Power Schottky 6A 10nC 175c Schottky Silicon Carbide Diodes 1.75 V   Through Hole TO-220-2 - 40 C + 175 C STPSC6H065 Tube   6 A Single 0.06 mA 650 V 60 A SiC              
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