- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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47,881
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 1.2 A | 400 mOhms | 3.3 nC | |||||||
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GET PRICE |
17,914
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1 A | 190 mOhms | 2.8 V | 2 nC | Enhancement | |||
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GET PRICE |
3,862
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 25V 30V N-Ch 498pF 4.1nC | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.6 A | 29 mOhms | 2 V | 11.3 nC | Enhancement | |||
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GET PRICE |
2,060
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 1.6W 2075pF | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 43 A | 10 mOhms | 2.5 V | 16.1 nC | Enhancement | PowerDI | ||
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GET PRICE |
1,921
In-stock
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ROHM Semiconductor | MOSFET N-CH 30V 300MA | 20 V | SMD/SMT | SOT-89-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 3 A | 160 mOhms | Enhancement | |||||||
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GET PRICE |
8,000
In-stock
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ROHM Semiconductor | MOSFET N-CH 30V .1A | 20 V | SMD/SMT | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 mA | 7 Ohms | Enhancement |
