- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,402
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 9.7 mOhms | 161 nC | Enhancement | |||||
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807
In-stock
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Infineon / IR | MOSFET MOSFT 150V 104A 11mOhm 77nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 104 A | 9.3 mOhms | 5 V | 77 nC | |||||
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605
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.2 mOhms | Enhancement | PowerTrench | |||||
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GET PRICE |
1,262
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | Enhancement | ||||
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755
In-stock
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STMicroelectronics | MOSFET N-Ch 55 Volt 80 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 80 A | 8 mOhms | Enhancement | ||||||
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GET PRICE |
800
In-stock
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Infineon / IR | MOSFET 40V 195A 1.8mOhm 150nC StrongIRFET | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 250 A | 1.8 mOhms | 3.9 V | 225 nC | Enhancement | StrongIRFET | |||
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GET PRICE |
2,000
In-stock
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Vishay Semiconductors | MOSFET 150V Vds 42A Id 10.5nC Qg Typ. | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 150 V | 42 A | 0.0372 Ohms | 2 V | 16 nC | Enhancement |
