- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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47,881
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 1.2 A | 400 mOhms | 3.3 nC | |||||
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GET PRICE |
41,620
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 4.2A 45mOhm 8nC Log Lvl | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 4.2 A | 45 mOhms | 8 nC | |||||
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1,402
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 9.7 mOhms | 161 nC | Enhancement | |||
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3,000
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 96A 10mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 96 A | 8 mOhms | 120 nC | ||||||
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GET PRICE |
1,262
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | Enhancement |