- Package / Case :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Number of Channels | Configuration | Technology | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Emitter- Base Voltage VEBO | Maximum DC Collector Current | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | Maximum Gate Emitter Voltage | Maximum Collector Cut-off Current | |
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1,988
In-stock
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Fairchild Semiconductor | Darlington Transistors NPN Epitaxial Darl | Through Hole | TO-220AB | + 150 C | TIP121 | Tube | Single | NPN | 80 V | 5 V | 5 A | 200 uA | |||||||||||||
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380
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V 20A Field Stop | Through Hole | TO-247AB-3 | + 150 C | Tube | Single | 600 V | +/- 20 V | ||||||||||||||||||
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580
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 2.3 Ohms | Enhancement | QFET | |||||||||||
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GET PRICE |
479
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 1.55 Ohms | Enhancement | QFET |