- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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6,934
In-stock
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Diodes Incorporated | MOSFET 100V P-Ch Enh FET 250mOhm -2.3A | +/- 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6 A | 300 mOhms | - 3 V | 17.5 nC | Enhancement | |||
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GET PRICE |
2,313
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 26.5mOhm 10V 5.8A | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 21 mOhms | 600 mV | 20 nC | Enhancement | |||
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GET PRICE |
1,068
In-stock
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Diodes Incorporated | MOSFET NMOS SINGLE N-CHANNL 20V 12A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 12 A | 8 mOhms | Enhancement | |||||
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3,862
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 25V 30V N-Ch 498pF 4.1nC | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.6 A | 29 mOhms | 2 V | 11.3 nC | Enhancement | |||
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2,774
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 72mOhm -10V -3.9A | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.3 A | 57 mOhms | - 1.3 V | 15.9 nC | Enhancement | |||
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2,060
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 1.6W 2075pF | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 43 A | 10 mOhms | 2.5 V | 16.1 nC | Enhancement | PowerDI | ||
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2,347
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -20V 52mOhm -5.0V | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 200 mOhms | - 0.9 V | 10.2 nC | Enhancement | |||
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2,250
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 40 mOhms | - 900 mV | 10.2 nC | Enhancement | |||
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23,997
In-stock
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Diodes Incorporated | MOSFET SINGLE P-CHANNEL | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 100 mOhms | Enhancement |
