- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
- Tradename :
- Applied Filters :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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20,446
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 900 uOhms | 1.2 V | 96 nC | Enhancement | OptiMOS | |||
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14,541
In-stock
|
ON Semiconductor | MOSFET COMP 2X2 20V 3.8A 100mOhm | 8 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 21 V, - 20 V | 3.8 A | 100 mOhms | Enhancement | ||||||
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5,990
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 800 uOhms | 2 V | 286 nC | Enhancement | OptiMOS | |||
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13,140
In-stock
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ON Semiconductor | MOSFET 30V 154mA N-Channel | 10 V | SMD/SMT | SC-75-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 154 mA | 2.3 Ohms | Enhancement | ||||||
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946
In-stock
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Infineon / IR | MOSFET MOSFT P-Ch -30V -20A 4.6mOhm | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 20 A | 6.8 mOhms | 58 nC | |||||||||
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971
In-stock
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Diodes Incorporated | MOSFET 60V 200mW | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 70 V | 115 mA | 4.4 Ohms | Enhancement | ||||||
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50,000
In-stock
|
Texas Instruments | MOSFET 12V N-CH Pwr MOSFET | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 22 A | 180 mOhms | 850 mV | 1.06 nC | NexFET | ||||
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239,600
In-stock
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Texas Instruments | MOSFET N-Channel MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 17.6 mOhms | 2.4 V | 17 nC | Enhancement | NexFET | |||
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45,000
In-stock
|
Texas Instruments | MOSFET CSD17579Q3A 30 V 8-VSONP | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 8.7 mOhms | 1.1 V | 15 nC | Enhancement | NexFET | |||
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6,000
In-stock
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Texas Instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.9 mOhms | 1.1 V | 30 nC | Enhancement | NexFET | |||
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300,000
In-stock
|
Texas Instruments | MOSFET 20-V P-CH NexFET Pwr MOSFET | - 8 V | SMD/SMT | WSON-FET-6 | - 40 C | + 85 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9.6 A | 23.9 mOhms | - 850 mV | 3.6 nC | NexFET | ||||
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GET PRICE |
186,988
In-stock
|
Diodes Incorporated | MOSFET MOSFET N-CHANNEL SOT-523 | 6 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 630 mA | 300 mOhms | 500 mV | 736.6 pC | Enhancement | ||||
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2,930
In-stock
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Infineon / IR | MOSFET MOSFT DUAL PCh -30V 4.9A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 76 mOhms | - 1 V | 23 nC | Enhancement | ||||
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63,000
In-stock
|
Texas Instruments | MOSFET N-CH Power MOSFET 12V 9.3mohm | 8 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 14.4 A | 9.3 mOhms | 800 mV | 5.1 nC | Depletion | NexFET | |||
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100,000
In-stock
|
Texas Instruments | MOSFET 30V Sync Buck NexFET | 10 V | SMD/SMT | LSON-CLIP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 25 A | 9 mOhms, 2.8 mOhms | 2.1 V | 12.5 nC | NexFET |